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Analysis Report Product List

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Samsung 3D V-NAND Structure Analysis Report

Samsung 3D V-NAND Structure Analysis Report

This is a structural analysis report of Samsung 3D V-NAND.

This report is a Memory Detailed Structural Analysis (MDSA) of the K9HQGY8S5M 3D V-NAND flash memory. The K9HQGY8S5M is the industry’s first implementation of a 32 cell vertical NAND memory and marks the departure from conventional planar flash memories. 【Features】 ○ Understand key design and manufacturing innovations ○ Make informed technical resource investment decisions ○ Find Evidence of Use For more details, please contact us or download the catalog. *This catalog is in English.

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LTM4700 uModule Regulator Structure and Implementation Analysis Report

LTM4700 uModule Regulator Structure and Implementation Analysis Report

Adopting excellent heat dissipation package technology and analyzing its heat removal circuit!

We provide an analysis report titled "ANALOG DEVICES PSiP (Power Supply in Package) LTM4700 uModule Regulator Structure and Implementation Analysis Report," which selects and analyzes representative products to clarify the packaging technology used in advanced PSiP. This analysis report reveals the technologies used to achieve the performance of the LTM4700 product. [Report Contents] - Structure and package layout of high-current switching MOSFETs - HS/LS half-bridge, source-down configuration of LS FETs - Shielded double poly-Si trench MOSFET structure for high area efficiency - Analysis of a double-sided Cu lead frame package - Identification of controller ICs, etc. *For more details, please download the PDF or feel free to contact us.

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Continental Manufactured Inverter IGBT Circuit Analysis Report

Continental Manufactured Inverter IGBT Circuit Analysis Report

Analyzing the disassembly process of the INV unit and the component list for the IGBT control board!

We offer the "Circuit Analysis Report of the Continental Inverter IGBT Control Board Mounted in the Jaguar I-Pace." The report includes product disassembly and circuit analysis of the mounted IGBT control board. Please feel free to contact us if you have any requests. [Analysis Contents] - Disassembly process of the INV unit - List of components mounted on the IGBT control board - System configuration diagram and detailed circuit diagram *For more details, please download the PDF or feel free to contact us.

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Navitas GaN Power IC Structure Analysis Report

Navitas GaN Power IC Structure Analysis Report

Overview of the manufacturing process flow and clarification of the structure of GaN transistors, resistors, and capacitance.

We provide the "Navitas GaN Power IC (NV6117 & NV6115) Structural Analysis Report." The structures of the low-voltage transistors, resistive elements, capacitive elements, and GaN epitaxial layers of NV6117 and NV6115 are presumed to be similar, and we analyze them using different samples. [Report Contents] ■ Comparison of 600V GaN products (NAVITAS, GaN Systems, Panasonic) ■ Package observation, X-ray observation, chip observation ■ Chip planar observation ■ Cross-sectional SEM analysis of high-voltage/low-voltage GaN transistors, resistive elements, and capacitive elements ■ GaN epitaxial layer TEM-EDX material analysis *For more details, please download the PDF or feel free to contact us.

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Analysis Report of High-Temperature Operating Power Transistors

Analysis Report of High-Temperature Operating Power Transistors

Analyzing how STMicro achieved continuous operation at high temperatures (Tj=200℃)!

We offer a report titled "Analysis Report on High-Temperature Operating Power Transistors." This report focuses on how the SiC-based power MOSFET (SCT30N120) from STMicroelectronics achieves operation at high temperatures (Tj=200℃) and provides a technical analysis. [Analysis Techniques] - Semiconductor chip structure/materials (technologies related to device materials and thermal expansion) - Bonding wire (technologies addressing cracks and delamination caused by thermal cycles) - Die attach materials structure and composition (innovations for temperature resistance) - Mold encapsulation resin (enhancements in temperature resistance through special material additives) *For more details, please download the PDF or feel free to contact us.

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IGBT module structural analysis, process, and device characteristics analysis report

IGBT module structural analysis, process, and device characteristics analysis report

Analysis of the Fuji Electric IGBT module for EV and HEV (6MBI800XV-075V-01)!

We provide the "Structural Analysis, Process, and Device Characteristics Analysis Report for Fuji Electric's EV and HEV IGBT Module (6MBI800XV-075V-01)." The Ice-Vce characteristics of the RC-IGBT, off-state collector leakage current, and breakdown voltage are measured, and the activation energy is calculated from the temperature dependence of the off-leak current. A comparison is made with Infineon's IGBT7. [Analysis Points] - The module analysis report confirms the internal structure of the module and clarifies the arrangement and layout of the RC-IGBT. - The chip structure analysis report reveals the planar layout and cross-sectional structure of the IGBT and FWD regions of the RC-IGBT. - The process analysis report discusses the process technology of the RC-IGBT, estimates the number of masks, and outlines the manufacturing process flow, among other details. *For more information, please download the PDF or feel free to contact us.*

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Waveform Analysis Report of Samsung 21nm TLC NAND

Waveform Analysis Report of Samsung 21nm TLC NAND

To those involved in device design and development! This is an analysis report on Samsung's NAND flash. It explains the important signal operations during device operation!

This is a report on waveform analysis of Samsung's 64 Gbit 21 nm TLC NAND flash from Semiconductor Insights Japan, a leading company in integrated circuit and electronic system technology and patent analysis. This waveform analysis describes the signal behavior of key signals when the device operates in several different standard operating modes. The analyzed component is Samsung's 21nm NAND Flash, where a microprobe was placed on the metal signal line part to operate the device and record the vibration behavior. 【Samsung 21nm NAND Flash】 ○ Used in Samsung's latest solid-state drives 【Observed Signals】 ○ Global word line ○ Bit line ○ P-well isolation ○ Global string select ○ Global ground select, etc. For more details, please download the catalog or contact us.

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Memory Structure Analysis Report "SK Hynix 16 nm"

Memory Structure Analysis Report "SK Hynix 16 nm"

Detailed Memory Structure Analysis Report of Flash Memory

This report is a detailed structural analysis of the SK Hynix H2JTDG8UD1BMS (16 GB, 16nm node MLC NAND flash memory) used in the Apple iPhone 6 Plus smartphone. The device is manufactured using a three-layer metal structure process (1st and 2nd metal layers: W, 3rd metal layer: Al), polysilicon control gates, and polysilicon floating gates. The memory array features a bit line pitch of 32nm and a word line pitch of 38nm. An air gap is employed to reduce crosstalk between adjacent cells. [Features] ○ Understanding of key design and manufacturing innovations ○ Informed technical resource investment decisions based on appropriate information For more details, please contact us or download the catalog.

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Short-Circuit Tolerance Evaluation and Analysis Report

Short-Circuit Tolerance Evaluation and Analysis Report

We will measure short-circuit tolerance and clarify the failure mechanism!

LTech Co., Ltd. is selling the "Short-Circuit Withstand Evaluation and Analysis Report." Compared to other SiC MOSFETs that explode at the moment of short-circuit failure, INFINEON CoolSiC MOSFETs fail softly without exploding. This report measures short-circuit withstand capability and clarifies the failure mechanisms. 【Features】 ■ Analysis and evaluation to identify the physical mechanisms that limit the short-circuit withstand capability of advanced SiC transistors based on test measurement data results. ■ Extraction of critical temperature and failure energy up to breakdown. ■ Analysis of the failure mode. ■ Comparison of the short-circuit withstand capability of INFINEON and other companies' 1200V transistors. ■ Clarification of changes in transistor structure and processes to enhance short-circuit resistance. *For more details, please refer to the PDF document or feel free to contact us.

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BYD In-house Battery Control Board (Cell Voltage Monitoring Board) Circuit Analysis Report

BYD In-house Battery Control Board (Cell Voltage Monitoring Board) Circuit Analysis Report

Analysis of the component list, block diagram, and detailed circuit diagram of the cell voltage monitoring board!

We offer the "BYD Yuan EV360 Equipped with BYD In-house Battery Control Board (Cell Voltage Monitoring Board) Circuit Analysis Report." We conduct analysis of the complete battery control board set (battery ECU, cell voltage monitoring, communication Gateway). [Analysis Contents] - List of components mounted on the cell voltage monitoring board - Block diagram - Detailed circuit diagram *For more details, please download the PDF or feel free to contact us.

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TOYOTA Yaris (HV) PCU Circuit Board Analysis Report

TOYOTA Yaris (HV) PCU Circuit Board Analysis Report

Analyzing the PCU equipped with a DCDC converter manufactured by Toyota Industries, in addition to the inverter!

We provide the "TOYOTA Yaris (HV) PCU (DCDC Converter: manufactured by Toyota Industries) Circuit Board Analysis Report." The TOYOTA Yaris is equipped with an evolved system based on the conventional THS II (Toyota Hybrid System II) used in the Prius, and this report focuses on analyzing its control unit. [Report Contents] ■ PCU Disassembly (only extraction of the DCDC converter module from the back side of the PCU) ■ DCDC Converter Module Disassembly ■ Layout of each layer of the DCDC Converter Circuit Board, functional block diagram, detailed circuit diagram, parts list *For more details, please download the PDF or feel free to contact us.

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SiC MOSFET Structure Analysis, Process, Device Characteristics Analysis Report

SiC MOSFET Structure Analysis, Process, Device Characteristics Analysis Report

Analysis of Toshiba Device & Storage SiC MOSFET (TW070J120B)!

We offer the "Toshiba Device & Storage SiC MOSFET (TW070J120B) Structural Analysis, Process, and Device Characteristics Analysis Report." The process and device characteristics analysis report estimates the manufacturing process flow based on the structural analysis results, estimates the number of photomasking process steps, analyzes the doping concentration of the N-epitaxial layer (drift layer), and conducts on-resistance analysis and breakdown voltage analysis. [Analysis Highlights] - Structural Analysis Report - Clarifies the planar layout and cross-sectional structure of the SiC-MOSFET - Conducts cross-sectional structure analysis of the SBD region, which is a feature of this product, and EDX analysis of the SBD metal - Process and Device Characteristics Analysis Report - Measures Schottky diode characteristics and compares them with the built-in body diode characteristics of other companies' SiC-MOSFET products, among other analyses. *For more details, please download the PDF or feel free to contact us.

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Report detailing the disassembly analysis of hearing aid products and components.

Report detailing the disassembly analysis of hearing aid products and components.

Currently offering sample reports that provide insights into the design of other companies during the development of medical device products!

TechInsights' teardown services are trusted by client companies in mobile, consumer electronics, medical devices, and other sectors for technology and intellectual property portfolio evaluation and management, acceleration of time-to-market, risk reduction, provision of competitive intelligence, and maximization of ROI. Various manufacturers utilize our teardown services to obtain information such as the following: 【Case Studies for Product Manufacturers】 - Design choices made by competitors - Emerging/leading component suppliers - Key cost factors behind new product features - Competitive advantages of new entrants in international markets 【Case Studies for Semiconductor/Component Suppliers】 - Potential of sockets - Trends in component integration - Trends in packaging - Competitive threats 【Case Studies for Intellectual Property Stakeholders】 - Verification of design wins - Tracking of assertion targets - Market sizing for relevant products and technologies (Custom teardowns are also available to meet unique customer needs.) *For more details, please download the catalog or contact us.

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